march 2013 FDB047N10 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 www.fairchildsemi.com 1 FDB047N10 n-channel powertrench ? mosfet 100 v, 164 a, 4.7 m description ?r ds(on) = 3.9 m ( typ.) @ v gs = 10 v, i d = 75 a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handing capability ? rohs compliant general description this n-channel mosfet is pr oducedusing fairchild semicon- ductor ? ?s advanced powertrench ? process that has been tai- lored to minimize the on-state resistance while maintaining superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies ? micro solar inverter d g s d 2 -pak gs d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDB047N10 unit v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) - continuous (t c = 100 o c, silicon limited) - continuous (t c = 25 o c, package limited) 164* a 116* a 120 a i dm drain current - pulsed (note 1) 656* a e as single pulsed avalanche energy (note 2) 1153 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 375 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDB047N10 unit r jc thermal resistance, junction to case, max. 0.4 o c/w r ja thermal resistance, junction to ambient (minimum pad of 2 oz copper), max. 62.5 thermal resistance, junction to ambient (1 in 2 pad of 2 oz copper), max. 40 * calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a.
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDB047N10 FDB047N10 d 2 -pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 100v, v gs = 0v - - 1 a v ds = 100v, v gs = 0v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 3.9 4.7 m g fs forward transconductance v ds = 10v, i d = 75a - 170 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 11500 15265 pf c oss output capacitance - 1120 1500 pf c rss reverse transfer capacitance - 455 680 pf t d(on) turn-on delay time v dd = 50v, i d = 75a v gs = 10v, r gen = 25 (note 4) - 174 358 ns t r turn-on rise time - 386 782 ns t d(off) turn-off delay time - 344 698 ns t f turn-off fall time - 244 499 ns q g(tot) total gate charge at 10v v ds = 80v, i d = 75a v gs = 10v (note 4) - 160 210 nc q gs gate to source gate charge - 56 - nc q gd gate to drain ?miller? charge - 36 - nc i s maximum continuous drain to source diode forward current - - 164* a i sm maximum pulsed drain to source diode forward current - - 656 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s -88-ns q rr reverse recovery charge - 245 - nc notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 0.41mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2468 1 10 100 -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 400 0.1 1 10 100 5 6 10v 8v 7v 6.5 v 6.0 v 5.5 v v gs = 5v *notes: 1. 250 s pulse test 2. t c = 25 o c i d ,drain current[a] v ds ,drain-source voltage[v] 300 0.0 0.5 1.0 10 100 1.4 300 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 2 0 100 200 300 400 0 2 4 6 8 10 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0 306090120150180 0 2 4 6 8 10 *note: i d = 75a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 50 100 150 200 limited by package i d , drain current [a] t c , case temperature [ o c] 0.1 1 10 100 0.1 1 10 100 1000 100ms 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 200 dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 dimensions in millimeters mechanical dimensions d 2 pak dimensions in millimeters
FDB047N10 n-channel powertrench ? mosfet www.fairchildsemi.com 8 ?2008 fairchild semiconductor corporation FDB047N10 rev. c1 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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